Stable carbon and radiocarbon isotope compositions of particle size fractions to determine origins of sedimentary organic matter in an estuary

Stable and radioactive carbon isotopic compositions of particle size fractions of a surface sediment from the Ems-Dollard estuary vary considerably with particle size. The organic material in the fine fractions (<20 µm) has considerably higher 14C values (14a~80%) than that in the coarse fractions (52%) and has higher δ13C values (average of -23‰ and -25.6‰, respectively). This shows that OM in the fine and the coarse fractions has different sources. The organic carbon in the fractions with particle sizes <20 µm is mainly imported from the North Sea. The contribution of material from the Ems river appears negligible. The carbon isotopic composition of the coarse fractions points to a terrestrial contribution. Discrete organic fragments are found of both terrestrial and marine/estuarine origin.

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10(17) m(-2). We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching. (C) 2015 Author(s).Dutch Polymer Institute (DPI), BISTABLE [704]; Fundacao para Ciencia e Tecnologia (FCT) through the research Instituto de Telecommunicacoes (IT-Lx); project Memristor based Adaptive Neuronal Networks (MemBrAiNN) [PTDC/CTM-NAN/122868/2010]; European Community Seventh Framework Programme FP7', ONE-P [212311]; Dutch Ministry of Education, Culture and Science (Gravity Program) [024.001.035]info:eu-repo/semantics/publishedVersio

Electrical instabilities in organic semiconductors caused by trapped supercooled water

It is reported that the electrical instability known as bias stress is caused by the presence of trapped water in the organic layer. Experimental evidence as provided by the observation of an anomaly occurring systematically at around 200 K. This anomaly is observed in a variety of materials, independent of the deposition techniques and remarkably coincides with a known phase transition of supercooled water. Confined water does not crystallize at 273 K but forms a metastable liquid. This metastable water behaves electrically as a charge trap, which causes the instability. Below 200 K the water finally solidifies and the electrical traps disappear. (c) 2006 American Institute of Physics

Electrical conduction of LiF interlayers in organic diodes

An interlayer of LiF in between a metal and an organic semiconductor is commonly used to improve the electron injection. Here, we investigate the effect of moderate bias voltages on the electrical properties of Al/LiF/poly(spirofluorene)/Ba/Al diodes by systematically varying the thickness of the LiF layer (2-50 nm). Application of forward bias V below the bandgap of LiF (V < E-g similar to 14 V) results in reversible formation of an electrical double layer at the LiF/poly(spirofluorene) hetero-junction. Electrons are trapped on the poly(spirofluorene) side of the junction, while positively charged defects accumulate in the LiF with number densities as high as 10(25)/m(3). Optoelectronic measurements confirm the built-up of aggregated, ionized F centres in the LiF as the positive trapped charges. The charged defects result in efficient transport of electrons from the polymer across the LiF, with current densities that are practically independent of the thickness of the LiF layer. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.Fundacao para Ciencia e Tecnologia (FCT) through the research Instituto de Telecommunicacoes (IT-Lx); project Memristor based Adaptive Neuronal Networks (MemBrAiNN) [PTDC/CTM-NAN/122868/2010]; KAU [71-100-35-HiCi]; European Community [212311]; ONE-P; Dutch Ministry of Education, Culture and Science [024.001.035]info:eu-repo/semantics/publishedVersio

Coideal Quantum Affine Algebra and Boundary Scattering of the Deformed Hubbard Chain

We consider boundary scattering for a semi-infinite one-dimensional deformed Hubbard chain with boundary conditions of the same type as for the Y=0 giant graviton in the AdS/CFT correspondence. We show that the recently constructed quantum affine algebra of the deformed Hubbard chain has a coideal subalgebra which is consistent with the reflection (boundary Yang-Baxter) equation. We derive the corresponding reflection matrix and furthermore show that the aforementioned algebra in the rational limit specializes to the (generalized) twisted Yangian of the Y=0 giant graviton.Comment: 21 page. v2: minor correction

The Quantum Affine Origin of the AdS/CFT Secret Symmetry

We find a new quantum affine symmetry of the S-matrix of the one-dimensional Hubbard chain. We show that this symmetry originates from the quantum affine superalgebra U_q(gl(2|2)), and in the rational limit exactly reproduces the secret symmetry of the AdS/CFT worldsheet S-matrix.Comment: 22 page

Bias-induced threshold voltages shifts in thin-film organic transistors

An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics

Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law (1/t)(alpha). The magnitude of the exponent alpha can be raised by application of an electric field and lowered to practically zero by optical excitation of the polyspirofluorene polymer. The metastable conduction is attributed to formation of metastable pairs of oppositely charged defects across the oxide-polymer interface, and the self-healing is related to resistive switching. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802485

Accumulation of advantage and disadvantage in research groups

This articles presents a test of the accumulation of advantage (AOA) hypothesis applied to differences in duration of research groups. Data are presented on the collaboration within groups both before and after the implementation of a policy measure. An extensive discussion of the findings is given as well as an elaboration of the AOA hypothesis